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Improving Resolution of Superlens Lithography by Phase-shifting Mask

Author(s): Yao, N (Yao, Na); Lai, Z (Lai, Zian); Fang, L (Fang, Liang); Wang, CT (Wang, Changtao); Feng, Q (Feng, Qin); Zhao, ZY (Zhao, Zheyu); Luo, XG (Luo, Xiangang)
Source: OPTICS EXPRESS  Volume: 19  Issue: 17  Pages: 15982-15989  Published: AUG 15 2011 
Abstract: We propose to apply phase-shifting mask (PSM) to superlens lithography to improve its resolution. The PSM comprises of chromium slits alternatively filled by Ag and PMMA. The pi-phase shift is induced whereas their transmittance of electric intensity is almost equal for two neighboring slits. The destructive interference between two slits has greatly improved the spatial resolution and image fidelity. For representative configurations of superlens lithography, FDTD numerical simulations demonstrate that two slits with center-to-center distance d = 35 nm (similar to lambda/10) can be resolved in PSM design, compared to 60 nm (similar to lambda/6) without the PSM. (C)2011 Optical Society of America
Addresses: [Yao, N; Lai, Z; Fang, L; Wang, CT; Feng, Q; Zhao, ZY; Luo, XG] Chinese Acad Sci, State Key Lab Opt Technol Microfabricat, Inst Opt & Elect, Chengdu 610209, Peoples R China
Reprint Address: Yao, N (reprint author), Chinese Acad Sci, State Key Lab Opt Technol Microfabricat, Inst Opt & Elect, POB 350, Chengdu 610209, Peoples R China
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