The Hayabusa CMOS image sensor platform features a 3 μm backside-illuminated pixel design that delivers a charge capacity of 100,000 electrons. It is designed for automotive imaging and includes simultaneous on-chip high dynamic range with LED flicker mitigation, plus real-time functional safety and automotive-grade qualification. It produces 120 dB images.

(From:https://www.laserfocusworld.com/articles/2018/02/on-semiconductor-cmos-sensorproduces-120-db-images.html)