ON Semiconductor CMOS sensor produces 120 dB images

说明: 1712LFW_pro_18_web

The Hayabusa CMOS image sensor platform features a 3 µm backside-illuminated pixel design that delivers a charge capacity of 100,000 electrons. It is designed for automotive imaging and includes simultaneous on-chip high dynamic range with LED flicker mitigation, plus real-time functional safety and automotive-grade qualification. It produces 120 dB images.

(From:https://www.laserfocusworld.com/articles/2018/02/on-semiconductor-cmos-sensorproduces-120-db-images.html)

  Copyright © The Institute of Optics And Electronics, The chinese Academy of Sciences
Address: Box 350, Shuangliu, Chengdu, Sichuan, China
Email:dangban@ioe.ac.cn Post Code: 610 209 备案号:蜀ICP备05022581号